Investigation of non-Pb all-perovskite 4-T mechanically stacked and 2-T monolithic tandem solar devices utilizing SCAPS simulation

Abstract SCAPS simulation was utilized to complement previously published perovskite-on-Si tandem solar devices and explore herein viable all-perovskite 4-T mechanically stacked 2-T monolithic non-Pb structures. CsSn 0.5 Ge I 3 (1.5 eV) used as top cell wide bandgap absorber, while CsSnI (1.3 chosen bottom low absorber. The simulated with AM 1.5G 1 Sun spectrum, the filtered spectrum from cell. To form a device, ITO recombination layer; current matching condition investigated by varying thickness of absorber layers. For current-matched device J sc 21.2 mA/cm 2 , optimized thicknesses 450 nm 815 were obtained for layers, respectively. At these thicknesses, PCEs cells 14.08% 9.25%, respectively, 18.32% final configuration. A much simpler fabricated on other hand, showcased 15.83% 9.15%, at layer 1300 900 nm, overall PCE 19.86%.